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| P-CHANNEL 60V - 0.18 - 12A TO-220/TO-220FP STripFETTM II POWER MOSFET Table 1: General Features TYPE STP12PF06 STF12PF06 STP12PF06 STF12PF06 Figure 1:Package RDS(on) < 0.20 < 0.20 ID 12 A 12 A VDSS 60 V 60 V TYPICAL RDS(on) = 0.18 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 TO-220FP DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS Figure 2: Internal Schematic Diagram Table 2: Order Codes PART NUMBER STP12PF06 STF12PF06 MARKING P12PF06 F12PF06 PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE Table 3: ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter STP20PF06 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature 60 60 20 12 8.4 48 60 0.4 6 200 -55 to 175 (1) ISD 12A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 12A, VDD= 25V Value STF20PF06 Unit V V V A A A W W/C V/ns mJ C 8 5.6 32 225 0.17 (*) Pulse width limited by safe operating area. NOTE:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed. March 2005 Rev. 2.0 1/10 STP12PF06 STF12PF06 Table 4: THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.5 62.5 300 TO-220FP 5.35 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) Table 5: OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V Min. 60 1 10 100 Typ. Max. Unit V A A nA Table 6: ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 10 A Min. 2 Typ. 3.4 0.18 Max. 4 0.20 Unit V Table 7: DYNAMIC Symbol gfs (2) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 6 A Min. 2.5 Typ. 6 850 230 75 Max. Unit S pF pF pF VDS = 25V f = 1 MHz VGS = 0 2/10 STP12PF06 STF12PF06 ELECTRICAL CHARACTERISTICS (continued) Table 8: SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 30 V ID = 6 A VGS = 10 V RG = 4.7 (Resistive Load, Figure 19) VDD= 48 V ID= 12 A VGS= 10 V Min. Typ. 20 40 16 4 6 21 Max. Unit ns ns nC nC nC Table 9: SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 30 V ID = 6 A VGS = 10 V RG = 4.7, (Resistive Load, Figure 19) Min. Typ. 40 10 Max. Unit ns ns Table 10: SOURCE DRAIN DIODE Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 1.5 %. Test Conditions Min. Typ. Max. 10 40 Unit A A V ns nC A ISD = 12 A VGS = 0 100 260 5.2 2.5 ISD = 12 A di/dt = 100A/s Tj = 150C VDD = 30 V (see test circuit, Figure 21) (1 )Pulse width limited by safe operating area. (2) Pulsed: Pulse duration = 300 s, duty cycle Figure 3: Safe Operating Area for TO-220 Figure 4: Safe Operating Area for TO-220FP 3/10 STP12PF06 STF12PF06 Figure 5: Thermal Impedance Figure 6: Thermal Impedance for TO-220FP Figure 7: Output Characteristics Figure 8: Transfer Characteristics Figure 9: Transconductance Figure 10: Static Drain-source On Resistance 4/10 STP12PF06 STF12PF06 Figure 11: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 13: Normalized Gate Threshold Voltage vs Temperature Figure 14: Normalized on Resistance vs Temperature Figure 15: Source-drain Diode Forward Characteristics Figure 16: Normalized Breakdown Voltage Temperature 5/10 STP12PF06 STF12PF06 Figure 17: Unclamped Inductive Load Test Circuit Figure 18: Unclamped Inductive Waveform Figure 19: Switching Times Test Circuits For Resistive Load Figure 20: Gate Charge test Circuit Figure 21: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STP12PF06 STF12PF06 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.65 15.25 6.20 3.50 3.75 mm. MIN. 4.4 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.40 28.90 14 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.6 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 7/10 STP12PF06 STF12PF06 TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D H F G1 E F2 123 L2 L4 8/10 G STP12PF06 STF12PF06 Table 11:Revision History Date March 2005 March 2005 Revision 1.0 2.0 FIRST ISSUE MINOR REVISION Description of Changes 9/10 STP12PF06 STF12PF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America. www.st.com 10/10 |
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